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d a t a sh eet product speci?cation file under integrated circuits, ic01 march 1994 integrated circuits TEA5710; TEA5710t am/fm radio receiver circuit
march 1994 2 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t features wide supply voltage range: 2.0 to 12 v low current consumption: 7.5 ma at am, 9.0 ma at fm high selectivity with distributed if gain led driver for tuning indication high input sensitivity: 1.6 mv/m (am), 2.0 m v (fm) for 26 db s/n good strong signal behaviour: 10 v/m at am, 500 mv at fm low output distortion: 0.8% at am, 0.3% at fm designed for simple and reliable pc-board layout high impedance mosfet input on am applications portable am/fm radio clock radio personal headphone radio description the TEA5710 is a high performance bimos ic for use in am/fm radios. all necessary functions are integrated: from am and fm front-end to detector output stages. quick reference data conditions am: f i = 1 mhz; m = 0.3; f m = 1 khz; v p = 3.0 v; measured in fig.4 with s1 in position b and s2 in position a, unless otherwise speci?ed. conditions fm: f i = 100 mhz; d f = 22.5 khz; f m = 1 khz; v p = 3.0 v; measured in fig.4 with s1 in position b and s2 in position a, unless otherwise speci?ed. ordering information notes 1. sot234-1; 1996 august 27. 2. sot137-1; 1996 august 27. symbol parameter min. typ. max. unit v p positive supply voltage 2.0 - 12 v i p supply current in am mode 5.6 7.5 9.9 ma in fm mode 7.3 9.0 11.2 ma t amb operating ambient temperature range - 15 -+ 60 c am performance v in1 rf sensitivity 40 55 70 m v v 13 af output voltage 36 45 70 mv thd total harmonic distortion - 0.8 2.0 % fm performance v in3 rf sensitivity 1.0 2.0 3.8 m v v 13 af output voltage 47 58 69 mv thd total harmonic distortion - 0.3 0.8 % extended type number package pins pin position material code TEA5710 24 sdil plastic sot234ag (1) TEA5710t 24 so24l plastic sot137a (2)
march 1994 3 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t fig.1 block diagram. handbook, full pagewidth mge106 fm-rf i fm-rf o fm-mixer fm front-end fm mixer am front-end fm-if1 i fm-rf1 o fm if 1 fm-if2 i fm if 2 fm-dem fm detector am mixer fm oscillator am oscillator am/fm indicator am/fm switch am detector stabilizer 24 1 20 4 6 8 10 12 18 16 22 5 9 11 17 23 3 2 719 13 15 21 14 am-if agc fm am rfgnd am/fm ind af am-agc/ fm-afc fm-osc v p ripple vstab a vstab b ifgnd am-osc am-rf i am-if1 i am-if2 i/o am-mixer subgnd TEA5710 TEA5710t
march 1994 4 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t pinning symbol pin description fm-rf i 1 fm-rf aerial input (input impedance typ. 50 w ) am-if1 i 2 input from ift or ceramic ?lter (input impedance typ. 3 k w ) am-mixer 3 open-collector output to ift fm-mixer 4 output to ceramic if ?lter (output impedance typ. 330 w ) vstab a 5 stabilized internal supply voltage (a) fm-if1 i 6 ?rst fm-if input (input impedance typ. 330 w ) am-if2 i/o 7 input/output to ift; output: current source fm-if1 o 8 ?rst fm-if output (output impedance typ. 330 w ) vstab b 9 stabilized internal supply voltage (b) fm-if2 i 10 second fm-if input (input impedance typ. 330 w ) ifgnd 11 ground of if and detector stages fm-dem 12 ceramic discriminator pin af 13 audio output (output impedance typ. 5 k w ) am/fm 14 switch terminal: open for am; ground for fm ind 15 ?eld-strength dependent indicator v p 16 positive supply voltage am-osc 17 parallel tuned am-osc circuit to ground fm-osc 18 parallel tuned fm-osc circuit to ground subgnd 19 substrate and rf ground fm-rf o 20 parallel tuned fm-rf circuit to ground am-agc/fm-afc 21 agc/afc capacitor pin ripple 22 ripple capacitor pin am-rf i 23 parallel tuned am aerial circuit to ground (total input capacitance typ. 3 pf) rfgnd 24 fm-rf ground
march 1994 5 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t fig.2 pin configuration TEA5710. handbook, halfpage tda5710 mge104 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 fm-rf i am-if i am-mixer fm-mixer vstab a fm-if1 i am-if2 i/o fm-if1 o vstab b fm-if2 i ifgnd fm-dem rfgnd am-rf i ripple am-agc/fm-afc subgnd fm-osc fm-rf o am-osc v p ind am/fm af fig.3 pin configuration TEA5710t. handbook, halfpage tda5710t mge105 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 fm-rf i am-if i am-mixer fm-mixer vstab a fm-if1 i am-if2 i/o fm-if1 o vstab b fm-if2 i ifgnd fm-dem rfgnd am-rf i ripple am-agc/fm-afc subgnd fm-osc fm-rf o am-osc v p ind am/fm af functional description the TEA5710 incorporates internal stabilized power supplies. the maximum supply voltage is 12 v, the minimum voltage can go down temporarily to 1.8 v without any loss in performance. the am circuit incorporates a double balanced mixer, a one pin low-voltage oscillator (up to 30 mhz), a field-strength dependent indicator output and is designed for distributed selectivity. the am input is designed to be connected to the top of a tuned circuit. agc controls the if amplification and for large signals it lowers the input impedance. the first am selectivity can be an ift as well as an ift combined with a ceramic filter; the second one is an ift. the fm circuit incorporates a tuned rf stage, a double balanced mixer, a one-pin oscillator, a field-strength indicator output and is designed for distributed if ceramic filters. the fm quadrature detector uses a ceramic resonator.
march 1994 6 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t limiting values in accordance with the absolute maximum rating system (iec 134) thermal resistance circuit design data symbol parameter min. max. unit v p positive supply voltage 0 12 v t stg storage temperature range - 55 + 150 c t amb operating ambient temperature range - 15 + 60 c t j junction temperature range - 15 + 150 c symbol parameter value unit r th j-a from junction to ambient for sdil version TEA5710 69 k/w for so24l version TEA5710t 76 k/w pin no. pin symbol dc pin voltage (v) equivalent circuit am fm 1 fm-rf i - 0.73 2 am-if1 i input 1.4 1.4 mge114 220 w 20 24 1 mge115 3 k w 2 5 11
march 1994 7 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t 3 am-mixer output 1.4 1.4 4 fm-mixer output - 1.0 5 vstab a 1.4 1.4 6 fm-if i input - 0.73 pin no. pin symbol dc pin voltage (v) equivalent circuit am fm mge116 5 3 mge117 680 w 4 mge118 16 22 5 mge119 2.7 k w 120 w 6 5 11
march 1994 8 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t 7 am-if2 i/o input/output 1.4 1.4 8 fm-if1 o output - 0.69 9 vstab b 1.4 1.4 10 fm-if2 i input - 0.73 11 ifgnd 0 0 pin no. pin symbol dc pin voltage (v) equivalent circuit am fm mge120 7 9 11 mge121 560 w 9 8 mge122 16 22 9 mge123 2.2 k w 180 w 10 9 11
march 1994 9 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t 12 fm-dem - 1.0 13 af output 0.6 0.7 14 am/fm switch 1.3 0 15 ind 3.0 3.0 16 v p 3.0 3.0 17 am-osc 0 0 pin no. pin symbol dc pin voltage (v) equivalent circuit am fm mge124 12 11 180 w 910 w mge125 25 k w 5 k w 13 11 mge126 14 mge127 15 11 mge128 17 19
march 1994 10 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t 18 fm-osc 0 0 19 subgnd 0 0 20 fm-rf o 00 21 am-agc/ fm-afc 0.1 0.7 pin no. pin symbol dc pin voltage (v) equivalent circuit am fm mge129 10 k w 18 21 19 mge114 220 w 20 24 1 mge130 21 11
march 1994 11 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t 22 ripple 2.1 2.1 23 am-rf i 00 24 rfgnd 0 0 pin no. pin symbol dc pin voltage (v) equivalent circuit am fm mge131 22 16 11 mge132 19 23 mge114 220 w 20 24 1
march 1994 12 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t am characteristics f i = 1 mhz; m = 0.3; f m = 1 khz; v p = 3.0 v; measured in fig.4 with s1 in position b and s2 in position a, unless otherwise speci?ed. fm characteristics f i = 100 mhz; d f = 22.5 khz; f m = 1 khz; v p = 3.0 v; measured in fig.4 with s1 in position b and s2 in position a, unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit i p supply current no input signal 5.6 7.5 9.9 ma c i input capacitance v 21 = 0.2 v - 3 - pf g c front-end conversion gain v 21 = 0.2 v 1.8 3.3 5.0 v in1 rf sensitivity s/n = 26 db 40 55 70 m v v in2 if sensitivity v 13 = 30 mv; 0.13 0.2 0.45 mv s 1 in position a v 13 af output voltage v in2 = 3.16 mv; 36 45 70 mv s 1 in position a thd total harmonic distortion v in1 = 1 mv - 0.8 2.0 % v in1 large signal handling m = 0.8; 150 300 - mv thd 8% i ind indicator current v in2 = 100 mv; 2 3.5 6 ma s 1 in position a i indoff indicator off current v in2 = 0 v; - 010 m a s 1 in position a symbol parameter conditions min. typ. max. unit i p supply current no input signal 7.3 9.0 11.2 ma v in3 rf limiting sensitivity v 13 = - 3 db 0.4 1.2 3.8 m v v in3 rf sensitivity s/n = 26 db 1.0 2.0 3.8 m v v 6 /v in3 front-end voltage gain v in3 1 mv; including ceramic ?lter k1 12 18 22 db v in4 if sensitivity s 2 in position b; v 13 = - 3 db - 20 30 m v v 13 af output voltage v in3 = 1 mv 47 58 69 mv thd total harmonic distortion v in3 = 1 mv; d f = 22.5 khz - 0.3 0.8 % v in3 large signal handling thd 5% - 500 - mv i ind indicator current v in4 = 100 mv; s 2 in position b 2 3.5 6 ma i indoff indicator off current v in4 = 0 v; s 2 in position b - 010 m a
march 1994 13 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t handbook, full pagewidth mge108 18 pf l2 22 pf fm-osc fm-rf l3 8.2 pf am-osc l4 fm am af v p 100 m f l8 40 m h 10 m f 10 nf 10 nf cqs54 24 23 22 21 20 19 18 17 16 15 14 13 12 l5 to pin 5 l6 k1 k2 10.7 mhz 3456 789101112 TEA5710 TEA5710t v p k3 ab ab s2 s1 100 mhz 468 khz 220nf 3 k w 1 nf 50 w 50 w 330 w 560 w 91 w 27 w (50 w) (50 w) r g (50 w) r g r g v in2 v in4 v in3 1 mhz 6.8 w 680 pf 43 w (50 w) r g v in1 fig.4 test circuit.
march 1994 14 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t application information handbook, full pagewidth mge107 p1 4.7 k w hp 32 w r1 10 w r2 10 w c6 18 pf 2 1 l2 cc 20 pf ctc 8 pf ctd 8 pf c7 22 pf 2 1 fm-osc fm-rfi ca 140 pf cb 20 pf cta 8 pf ctb 8 pf 1 2 l1 am-rfi l3 cd 80 pf c8 8.2 pf 1 3 am-osc l4 fm am on off 3v v p c2 100 m f c10 100 m f c11 100 m f c3 10 m f c4 10 nf c5 10 nf c9 100 nf led cqs54 24 23 22 21 20 19 18 17 16 15 14 13 af 12 6 1 1 3 2 4 l5 l6 k1 k2 k3 sfe10.7ms3 sfe10.7ms2 cda10.7mc40 3 2 34 8765 1234 56789101112 TEA5710 TEA5710t tda7050t v p co 22 pf l7 60 nh c1 4.7 nf fig.5 application circuit of TEA5710 (am: 522 to 1611 khz, fm: 87.5 to 108 mhz) with stereo headphone amplifier tda7050t.
march 1994 15 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t fig.6 printed-circuit board layout (track side) for application circuit of fig.5. handbook, full pagewidth mge109
march 1994 16 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t fig.7 printed-circuit board layout (component side) for application circuit of fig.5. handbook, full pagewidth ant gnd 100mhz c12 c1 680 c2 r2 r3 l5 4.7 560 27 91 1 c4 c3 k1 c11 c7 6.8 43 l2 ant f m a m osc hp plug TEA5710 l6 k2 k3 c8 c5 c6 led l3 p1 1.5 v 1.5 v c10 gnd af l4 c9 1mhz l1 40 m h mge110
march 1994 17 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t components for figs 4 and 5 coils l1 am-aerial ferroceptor length = 6 cm l1-2 = 625 m h n1-2 = 105 turns l2 fm-rf l1-2 = 66 nh n1-2 = 2.5 turns unloaded q = 150 toko type s18 toko no. 301ss-0200 l3 fm-osc l1-2 = 40 nh n1-2 = 1.5 turns unloaded q = 150 toko type s18 toko no. 301ss-0100 l4 am-osc l1-3 = 270 m h n1-2 = 18 n2-3 = 70 unloaded q = 100 wire diameter 0.07 mm toko type 7p material toko 7brs l5 am-if1 l1-3 = 625 m h n1-2 = 17 turns n2-3 = 141 turns n4-6 = 10 turns c1-3 = 180 pf unloaded q = 90 wire diameter 0.07 mm toko type 7p material toko 7mcs l6 am-if2 l1-3 = 625 m h n1-2 = 28 turns n2-3 = 130 turns c1-3 = 180 pf unloaded q = 90 wire diameter 0.07 mm toko type 7p material toko 7mcs mge133 l4 3 2 1 s mge134 3 2 1 4 6 l5 s s mge135 3 2 1 l6 s
march 1994 18 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t application notes 1. short circuiting: all pins are short-circuit proof except pin 1 (fm-rf i ) with respect to the supply voltage pin. 2. tuning indicator (at pin 15, ind): connect either a tuning indicator (e.g. a led) between this pin and the supply voltage (pin 16) or connect the pin ind to ground. 3. for an example of pc-board layout: see figs 6 and 7. l7 fm-aerial print-coil l1-2 = 60 nh n1-2 = 2.5 turns l8 am-rf test circuit only: l1-3 = 40 m h n1-3 = 34 turns unloaded q = 85 wire diameter 0.09 mm toko type 7p material toko 7brs ceramic ?lters k1 fm-if1 murata sfe 10.7 ms 3 k2 fm-if2 murata sfe 10.7 ms 2 k3 fm-det murata cda 10.7 mc 40 capacitors c1 varicon am: 140/82 pf fm: 2 20 pf trimmer: 4 8 pf toko type no. hu-22124 mge136 l8 3 1 s
march 1994 19 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t fig.8 typical am audio output voltage (v af ; signal at m = 0.3), noise, thd (at m = 0.3) and indicator current (level) as a function of rf input voltage (v in1 ; f = 1 khz). measured in test circuit of fig.4 with v p = 3.0 v. handbook, full pagewidth 0 10 - 1 10 2 10 3 10 4 10 5 v in1 ( m v) 10 6 110 v af (db) 0 db = 45 mv mge111 - 10 - 20 - 30 - 40 - 50 - 60 - 70 level (ma) thd (%) 7 6 5 4 3 2 1 0 noise m = 0 signal m = 0.3 thd m = 0.3 level
march 1994 20 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t fig.9 typical am audio output voltage (v af ; signal at m = 0.3), noise, thd (at m = 0.3) and indicator current (level) as a function of field-strength (f = 1 khz). measured at 1 mhz in application circuit of fig.5 with v p =3v. handbook, full pagewidth 0 110 2 10 3 10 4 10 5 field-strength ( m v) 10 6 10 7 10 v af (db) 0 db = 45 mv mge112 - 10 - 20 - 30 - 40 - 50 - 60 - 70 level (ma) thd (%) 7 6 5 4 3 2 1 0 noise m = 0 signal m = 0.3 thd m = 0.3 level
march 1994 21 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t fig.10 typical fm audio output voltage (v af ; signal), noise, thd and indicator current (ind) as a function of rf input voltage (v in3 ; d f = 22.5 khz). measured in test circuit of fig.4 at v p = 3 v. handbook, full pagewidth 0 10 - 1 10 2 10 3 10 4 10 5 v in3 ( m v) 10 6 110 v af (db) 0 db = 65 mv mge113 - 10 - 20 - 30 - 40 - 50 - 60 - 70 ind (ma) thd (%) 7 6 5 4 3 2 1 0 thd 22.5 khz signal noise ind
march 1994 22 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t package outlines unit b 1 cee m h l references outline version european projection issue date iec jedec eiaj mm dimensions (mm are the original dimensions) sot234-1 92-11-17 95-02-04 b max. w m e e 1 1.3 0.8 0.53 0.40 0.32 0.23 22.3 21.4 9.1 8.7 3.2 2.8 0.18 1.778 10.16 10.7 10.2 12.2 10.5 1.6 4.7 0.51 3.8 m h c (e ) 1 m e a l seating plane a 1 w m b 1 e d a 2 z 24 1 13 12 b e pin 1 index 0 5 10 mm scale note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. (1) (1) d (1) z a max. 12 a min. a max. sdip24: plastic shrink dual in-line package; 24 leads (400 mil) sot234-1
march 1994 23 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p q z y w v q references outline version european projection issue date iec jedec eiaj mm inches 2.65 0.30 0.10 2.45 2.25 0.49 0.36 0.32 0.23 15.6 15.2 7.6 7.4 1.27 10.65 10.00 1.1 1.0 0.9 0.4 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.1 0.4 sot137-1 x 12 24 w m q a a 1 a 2 b p d h e l p q detail x e z c l v m a 13 (a ) 3 a y 0.25 075e05 ms-013ad pin 1 index 0.10 0.012 0.004 0.096 0.089 0.019 0.014 0.013 0.009 0.61 0.60 0.30 0.29 0.050 1.4 0.055 0.42 0.39 0.043 0.039 0.035 0.016 0.01 0.25 0.01 0.004 0.043 0.016 0.01 92-11-17 95-01-24 e 1 0 5 10 mm scale so24: plastic small outline package; 24 leads; body width 7.5 mm sot137-1
march 1994 24 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). sdip s oldering by dipping or by wave the maximum permissible temperature of the solder is 260 c; solder at this temperature must not be in contact with the joint for more than 5 seconds. the total contact time of successive solder waves must not exceed 5 seconds. the device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (t stg max ). if the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. r epairing soldered joints apply a low voltage soldering iron (less than 24 v) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. if the temperature of the soldering iron bit is less than 300 c it may remain in contact for up to 10 seconds. if the bit temperature is between 300 and 400 c, contact may be up to 5 seconds. so r eflow soldering reflow soldering techniques are suitable for all so packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. w ave soldering wave soldering techniques can be used for all so packages if the following conditions are observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow. the package footprint must incorporate solder thieves at the downstream end. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. r epairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
march 1994 25 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5710; TEA5710t definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.

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